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HERA801G - HERA808G
8.0 AMPS. Glass Passivated High Efficient Rectifiers TO-220AC
.185(4.70) .175(4.44) .412(10.5) MAX .113(2.87) .103(2.62) DIA .154(3.91) .148(3.74) .27(6.86) .23(5.84) .594(15.1) .587(14.9) PIN1 .16(4.06) .14(3.56) .56(14.22) .53(13.46) .037(0.94) .027(0.68) 2 .11(2.79) .10(2.54) .055(1.40) .045(1.14)
Features
Glass passivated chip junction. High efficiency, Low VF High current capability High reliability High surge current capability For use in low voltage, high frequency inventor, free wheeling, and polarity protection application.
Mechanical Data
Cases: TO-220AC Molded plastic Epoxy: UL 94V0 rate flame retardant Terminals: Pure tin plated, lead free solderable per MIL-STD-202, Method 208 guaranteed Polarity: As marked High temperature soldering guaranteed: 260 oC/10 seconds .16",(4.06mm) from case. Weight: 2.24 grams
.205(5.20) .195(4.95)
.025(0.64) .014(0.35)
PIN 1 PIN 2 CASE
Dimensions in inches and (millimeters)
Rating at 25 oC ambient temperature unless otherwise specified. Single phase, half wave 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%
Maximum Rating and Electrical Characteristics
Type Number
Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current .375"(9.5mm) Lead Length o @T C =100 C Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) Maximum Instantaneous Forward Voltage @8.0A Maximum DC Reverse Current @T A =25 oC at Rated DC Blocking Voltage o @ T A =125 C Maximum Reverse Recovery Time ( Note 1 ) Typical Junction Capacitance ( Note 2 ) Typical Thermal Resistance (Note 3) Operating Temperature Range
Symbol V RRM V RMS V DC I(AV) IFSM VF IR Trr
HERA HERA HERA HERA HERA HERA HERA HERA 801G 802G 803G 804G 805G 806G 807G 808G
Units
V V V A
50 35 50
100 70 100
200 140 200
300 210 300
400 280 400
600 420 600
800 1000 560 700 800 1000
8.0
150 1.0 1.3 10 400 50 65 2.0 -65 to +150 -65 to +150 80 55
o
A 1.7 V uA uA nS pF C/W
o o
Cj
R JC
TJ
Storage Temperature Range T STG 1. Reverse Recovery Test Conditions: IF =0.5A, IR =1.0A, IRR =0.25A Notes: 2. Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. 3. Mounted on Heatsink Size of 2 in x 3 in x 0.25 in Al-Plate.
C C
Version: A06
RATINGS AND CHARACTERISTIC CURVES (HERA801G THRU HERA808G)
FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT. (A)
20
FIG.2- TYPICAL REVERSE CHARACTERISTICS
1000
INSTANTANEOUS REVERSE CURRENT. ( A)
16 12 8 4 0
Tj=125 0C
100
Tj=75 0C
10
0
50
100
o
150
CASE TEMPERATURE. ( C)
PEAK FORWARD SURGE CURRENT. (A)
FIG.3- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
150
8.3ms Single Half Sine Wave JEDEC Method
1
Tj=25 0C
120 90 60 30
0.1 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FIG.5- TYPICAL FORWARD CHARACTERISTICS
100
INSTANTANEOUS FORWARD CURRENT. (A)
30 10
HE RA 80 1G ~H ER A8 04 G
0
1
2
5
10
20
50
100
NUMBER OF CYCLES AT 60Hz
FIG.4- TYPICAL JUNCTION CAPACITANCE
180 150
3 1
R HE
A8
05
G
HE
RA
80
~ 6G
HE
RA
80
8G
CAPACITANCE.(pF)
120 90
HE RA
0.3 0.1
80
1G
ER 60 HER A8 A8 05 06 G G~ HE 30 RA 80 8G 0 1 2 5 10 20
~H
0.03 0.01 0.4
50
100
200
500
1000
0.6
REVERSE VOLTAGE. (V)
0.8 1.0 1.2 1.4 FORWARD VOLTAGE. (V)
1.6
1.8
FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50 NONINDUCTIVE 10 NONINDUCTIVE trr +0.5A DUT (-) PULSE GENERATOR (NOTE 2) NON INDUCTIVE OSCILLOSCOPE (NOTE 1) (+) 0 -0.25A
(+) 50Vdc (approx) (-)
NOTES: 1. Rise Time=7ns max. Input Impedance= 1 megohm 22pf 2. Rise Time=10ns max. Sourse Impedance= 50 ohms
-1.0A 1cm SET TIME BASE FOR 5/ 10ns/ cm
Version: A06

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